STRONTIUM AND SRO EPITAXY ON HYDROGEN-TERMINATED SI(111)

被引：11
|
作者：
HIRATA, A
SAIKI, K
KOMA, A
机构：
[1] Department of Chemistry, University of Tokyo, Bunkyo-ku, Tokyo 113
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期
关键词：
D O I：
10.1063/1.112474
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxy of Sr and SrO films onto hydrogen-terminated Si (111) has been demonstrated. The use of hydrogen-terminated Si (111) has enabled the epitaxy of metallic Sr films, whereas direct epitaxy on a clean 7×7 Si (111) surface has not been successful. The alternate supply of Sr and O during growth has made it possible to grow good epitaxial SrO films. It has been revealed by electron energy loss spectroscopy that stoichiometric SrO films are obtained by this method. © 1994 American Institute of Physics.
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页码：3182 / 3184
页数：3
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