SURFACE CONDUCTION IN SHORT-CHANNEL MOS DEVICES AS A LIMITATION TO VLSI SCALING

被引：56

作者：

EITAN, B ^{[1
]}

FROHMANBENTCHKOWSKY, D ^{[1
]}

机构：

[1] HEBREW UNIV JERUSALEM,SCH APPL SCI & TECHNOL,JERUSALEM 91000,ISRAEL

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：254 / 266

页数：13

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