INTERFACE-STATE GENERATION DURING AVALANCHE INJECTION OF ELECTRONS FROM SI INTO SIO2

被引：11
|
作者：
SUNAGA, T [1 ]
LYON, SA [1 ]
JOHNSON, WC [1 ]
机构：
[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
来源：
APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期
关键词：
D O I：
10.1063/1.93268
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：810 / 811
页数：2
相关论文
共 50 条
  • [11] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES
    NICOLLIAN, EH
    BERGLUND, CN
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 3052 - +
  • [12] Second harmonic generation from the Si/SiO2 interface
    Cundiff, ST
    Fortier, TM
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 646 - 657
  • [13] Generation and reduction in SiO2/Si interface state density during plasma etching processes
    Ishikawa, Yasushi
    Ichihashi, Yoshinari
    Yamasaki, Satoshi
    Samukawa, Seiji
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)
  • [14] Generation and reduction in SiO2 /Si interface state density during plasma etching processes
    Ishikawa, Yasushi
    Ichihashi, Yoshinari
    Yamasaki, Satoshi
    Samukawa, Seiji
    Journal of Applied Physics, 2008, 104 (06):
  • [15] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [16] Model for defect generation at the (100)Si/SiO2 interface during electron injection in MOS structures
    Houssa, M
    Autran, JL
    Heyns, MM
    Stesmans, A
    APPLIED SURFACE SCIENCE, 2003, 212 : 749 - 752
  • [17] INTERFACE STATES GENERATED BY THE INJECTION OF ELECTRONS AND HOLES INTO SIO2
    LYON, SA
    APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 552 - 564
  • [18] AVALANCHE INJECTION OF HOLES INTO SIO2
    AITKEN, JM
    YOUNG, DR
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2128 - 2134
  • [19] EVALUATION OF Q(BD) FOR ELECTRONS TUNNELING FROM THE SI/SIO2 INTERFACE COMPARED TO ELECTRON-TUNNELING FROM THE POLY-SI/SIO2 INTERFACE
    GONG, SS
    BURNHAM, ME
    THEODORE, ND
    SCHRODER, DK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (07) : 1251 - 1257
  • [20] Vibration of an interface between Si and SiO2 during reduction of SiO2
    Nagoya Univ, Nagoya, Japan
    Philos Mag Lett, 3 (173-179):
12345