INTERFACE-STATE GENERATION DURING AVALANCHE INJECTION OF ELECTRONS FROM SI INTO SIO2

被引：11

作者：

SUNAGA, T ^{[1
]}

LYON, SA ^{[1
]}

JOHNSON, WC ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：810 / 811

页数：2

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