SIC RECENT DEVELOPMENTS - MATERIAL, TECHNOLOGY, DEVICES

被引：13
作者：
HELBIG, R
机构：
[1] Institut Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, 8520
来源：
PHYSICA SCRIPTA | 1991年 / T35卷
关键词：
D O I：
10.1088/0031-8949/1991/T35/042
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SiC is a very promising wide gap material. Here we review the present status of our understanding of its electronic structure and properties of crystal growth and of device fabrication and characteristics. Be patient - it is the right stuff! W. Shockley at the 1st International SiC conference 1959 (cited after W. J. Choyke).
引用
收藏
页码：194 / 200
页数：7
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