THERMODYNAMIC DESCRIPTION OF AMPHOTERIC IMPURITIES IN AIIIBV-TYPE SEMICONDUCTORS

被引：0
作者：
RYTOVA, NS
FISTUL, VI
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 4卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：939 / &
相关论文
共 50 条
  • [21] Hydrogen impurities in p-type semiconductors, GeS and GeTe
    Nakamura, Jumpei G.
    Kawakita, Yukinobu
    Shimomura, Koichiro
    Suemasu, Takashi
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (19)
  • [22] COMPUTING THE INTEGRALS IN THE METHOD OF EQUIVALENT ORBITALS AND EVALUATING THE VALENCE-BAND PARAMETERS FOR SEMICONDUCTORS OF THE AIIIBV TYPE
    NRANYAN, AA
    SOVIET PHYSICS-SOLID STATE, 1960, 2 (03): : 439 - 446
  • [23] THERMODYNAMIC DESCRIPTION OF TYPE-II SUPERCONDUCTORS
    KIRSCHNER, I
    MARTINAS, K
    ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1981, 50 (02): : 167 - 170
  • [24] Origin of Meyer-Neldel type compensation behavior in organic semiconductors at large carrier concentrations: Disorder versus thermodynamic description
    Fishchuk, I. I.
    Kadashchuk, A.
    Mityashin, A.
    Gavrilyuk, M. M.
    Koehler, A.
    Baessler, H.
    Genoe, J.
    Sitter, H.
    Sariciftci, N. S.
    PHYSICAL REVIEW B, 2014, 90 (24)
  • [25] CONFIGURATION-INTERACTION DESCRIPTION OF TRANSITION-METAL IMPURITIES IN II-VI SEMICONDUCTORS
    MIZOKAWA, T
    FUJIMORI, A
    PHYSICAL REVIEW B, 1993, 48 (19): : 14150 - 14156
  • [26] Thermodynamic Potential for the Anodic Dissolution of n-Type Semiconductors
    Bard, Allen J.
    Wrighton, Mark S.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1706 - 1710
  • [27] Intermediately bound excitons in wurtzit type semiconductors doped with transition metal impurities
    Dahan, P.
    Fleurov, V.
    Kikoin, K.A.
    Materials Science Forum, 1995, 196-201 (pt 2): : 755 - 760
  • [28] OPTICAL PROPERTIES OF IMPURITIES IN BLENDE TYPE-2-6 SEMICONDUCTORS COMPOUNDS
    BESERMAN, R
    BALKANSK.M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (02) : 355 - &
  • [29] Intermediately bound excitons in wurtzit type semiconductors doped with transition metal impurities
    Dahan, P
    Fleurov, V
    Kikoin, KA
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 755 - 759
  • [30] ROLE PLAYED BY N AND N-N IMPURITIES IN TYPE-IV SEMICONDUCTORS
    CUNHA, C
    CANUTO, S
    FAZZIO, A
    PHYSICAL REVIEW B, 1993, 48 (24): : 17806 - 17810
12345