FEMTOJOULE HIGH-SPEED PLANAR GAAS E-JFET LOGIC

被引：85

作者：

ZULEEG, R ^{[1
]}

NOTTHOFF, JK ^{[1
]}

LEHOVEC, K ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90007

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：628 / 639

页数：12

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[7]

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[8] FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J].

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[9] C-V ANALYSIS OF A PARTIALLY DEPLETED SEMICONDUCTING CHANNEL [J].

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[10]

Lehovec K., 1975, Critical Reviews in Solid State Sciences, V5, P475, DOI 10.1080/10408437508243507

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