EPITAXIAL GROWTH AND PROPERTIES OF SILICON ON ALUMINA-RICH SINGLE-CRYSTAL SPINEL

Magnesium aluminate spinel has been investigated as a substrate material for epitaxial growth of silicon because the lattice match of the cubic silicon to cubic spinel is better than the match between silicon on sapphire. This paper reports on the properties of 1. 4 to 1. 6 U thick silicon on flame-fusion spinel in the composition range MgO. 1. 5A1//2O//3 to MgO. 2. 2A1//2O//3. The hole mobility and the stability of the mobility during thermal oxidation were studied as a function of the deposition rate and carrier concentration.