TEMPERATURE ACCELERATION OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN

被引：93
作者：
MOAZZAMI, R
LEE, JC
HU, CM
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期
关键词：
D O I：
10.1109/16.43668
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2462 / 2465
页数：4
相关论文
共 13 条
[1]  
Baglee D. A., 1984, PROC IEEE INT REL PH, P152, DOI [10.1109/IRPS.1984.362035, DOI 10.1109/IRPS.1984.362035]
[2]  
CHEN CF, 1987, IEEE T ELECTRON DEV, V34, P1540, DOI 10.1109/T-ED.1987.23117
[3]  
CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[4]  
Crook DL., 1979, P 17 INT REL PHYS S, P1
[5]   RELIABILITY OF 6-10 NM THERMAL SIO2-FILMS SHOWING INTRINSIC DIELECTRIC INTEGRITY [J].
HOKARI, Y ;
BABA, T ;
KAWAMURA, N .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2485-2491
[6]   MODELING AND CHARACTERIZATION OF GATE OXIDE RELIABILITY [J].
LEE, JC ;
CHEN, IC ;
HU, CM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2268-2278
[7]  
McPherson J. W., 1985, P INT RELIABILITY PH, P1
[8]  
Moazzami R., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P710, DOI 10.1109/IEDM.1988.32911
[9]  
MOSICHI MM, 1984, IEDM TECH DIG, P157
[10]  
SODEN JM, 1987, SEMICONDUCTOR IN MAY, P240
12