HIGH-ENERGY ELECTRON INDUCED DISPLACEMENT DAMAGE IN SILICON

被引：79

作者：

DALE, CJ

MARSHALL, PW

BURKE, EA

SUMMERS, GP

WOLICKI, EA

机构：

[1] SACHS FREEMAN ASSOCIATES INC,LANDOVER,MD 20785

[2] MISSION RES CORP,SAN DIEGO,CA 92123

[3] WOLICKI ASSOCIATES INC,ALEXANDRIA,VA 22307

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transistors, Bipolar

引用

页码：1208 / 1214

页数：7

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