ANTIFERROELECTRIC PBZRO3 THIN-FILMS PREPARED BY MULTI-ION-BEAM SPUTTERING

Antiferroelectric PbZrO3 thin films have been fabricated by a multi-ion-beam sputtering technique at a substrate temperature as low as 415°C. Single crystal perovskite PbZrO3 films oriented along the a axis could be epitaxially grown on (100)MgO, (100)Pt/MgO substrates using a PbTiO3 buffer layer. The PbZrO3 films achieved high dielectric constants of about 400, which are almost 2.4 times larger than that of bulk PbZrO3. The measurements of D-E hysteresis loops and Curie temperature demonstrated the antiferroelectric to ferroelectric phase transition of PbZrO3 films with a thickness of 1770 Å, while for PbZrO3 films of 875 Å the phase transition could not be clearly observed. © 1995 American Institute of Physics.