GAAS/ALGAAS QUANTUM-WELLS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION

被引：6

作者：

OKADA, Y

OHTA, S

FUJITA, T

KAWABE, M

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

ATOMIC HYDROGEN-MEDIATED EPITAXY; HYDROGEN PASSIVATION IN SEMICONDUCTORS; MOLECULAR BEAM EPITAXY (MBE); QUANTUM WELLS; PHOTOLUMINESCENCE; HYDROGEN-TERMINATED GAAS;

D O I：

10.1143/JJAP.33.759

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of GaAs/AlGaAs quantum wells grown by molecular beam epitaxy with atomic hydrogen ir radiation have been investigated by photoluminescence (PL) method. Narrow PL linewidths have been obtained for samples grown at a low-temperature of 330 degrees C with atomic hydrogen and without any growth interruptions. This is due to enhanced Ga migration on GaAs (100) surface under the presence of atomic hydrogen thereby resulting in atomically smooth interfaces. It has also been shown that the PL intensities can be improved as the non-radiative recombination centers could be effectively passivated by the hydrogen atoms.

引用

页码：759 / 762

页数：4

共 20 条

[1] DLTS AND PHOTOLUMINESCENCE OF MBE GAAS GROWN IN THE PRESENCE OF HYDROGEN [J].

BOSACCHI, A ;

FRANCHI, S ;

GHEZZI, C ;

GOMBIA, E ;

GUZZI, M ;

STAEHLI, JL ;

ALLEGRI, P ;

AVANZINI, V .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :181-187

[2] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1020-1022

[3] ENHANCED 2-DIMENSIONAL GROWTH OF GAAS ON INP BY MOLECULAR-BEAM EPITAXY WITH ATOMIC-HYDROGEN IRRADIATION [J].

CHUN, YJ ;

OKADA, Y ;

KAWABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (8A) :L1085-L1087

[4] LOW-TEMPERATURE SURFACE CLEANING OF INP BY IRRADIATION OF ATOMIC-HYDROGEN [J].

CHUN, YJ ;

SUGAYA, T ;

OKADA, Y ;

KAWABE, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B) :L287-L289

[5] SURFACTANTS IN EPITAXIAL-GROWTH [J].

COPEL, M ;

REUTER, MC ;

KAXIRAS, E ;

TROMP, RM .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :632-635

[6] PHOTOLUMINESCENCE FROM ALGAAS-GAAS SINGLE QUENTUM WELLS WITH GROWTH INTERRUPTED HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY [J].

FUKUNAGA, T ;

KOBAYASHI, KLI ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L510-L512

[7] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES [J].

GOLDSTEIN, L ;

HORIKOSHI, Y ;

TARUCHA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1489-1492

[8] LOW-TEMPERATURE SURFACE CLEANING OF GAAS BY ELECTRON-CYCLOTRON RESONANCE (ECR) PLASMA [J].

KONDO, N ;

NANISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (01) :L7-L9

[9]

MATSUMOTO H, 54TH AUT M JAP SOC A, P286

[10]

NONOYAMA S, 1992, LASER KAGAKU KENKYU, V14, P156

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