COMPARISON OF LIGHT EMITTING DIODES IN A SPACE RADIATION ENVIRONMENT

被引：14

作者：

STANLEY, AG

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：239 / +

页数：1

共 10 条

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AUKERMAN, LW ;

MILLEA, MF ;

MCCOLL, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :174-&

[2] BAND-FILLING CURRENT IN HEAVILY DOPED GAAS DIODES [J].

AUKERMAN, LW ;

MILLEA, MF .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2585-&

[3] DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS [J].

AUKERMAN, LW ;

MILLEA, MF ;

MCCOLL, M .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :685-&

[4]

BARRETT AM, 1969, OCT INT EL DEV M WAS

[5] MECHANISMS OF RADIATION EFFECTS ON LASERS [J].

COMPTON, DMJ ;

CESENA, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :55-+

[6]

LOGAN RA, 1964, J APPLIED PHYSICS LE, V5, P41

[7] 1.0- AND 1.28-EV EMISSION FROM GAAS DIODES [J].

MILLEA, MF ;

AUKERMAN, LW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1788-&

[8] DEGRADATION OF LUMINESCENCE IN NEUTRON-IRRADIATED GAAS DIODES [J].

PETREE, MC .

APPLIED PHYSICS LETTERS, 1963, 3 (04) :67-67

[9] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J].

RUPPRECHT, H ;

WOODALL, JM ;

KONNERTH, K ;

PETTIT, DG .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :221-+

[10] LOCATION OF SOURCE OF RECOMBINATION RADIATION IN GA(AS1-XPX) P-N JUNCTIONS BY ELECTRON BOMBARDMENT [J].

WOLFE, CM ;

SIRKIS, MD ;

NUESE, CJ ;

HOLONYAK, N ;

GADDY, OL ;

PURL, OT ;

KUNZ, WE .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) :2087-&

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