IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS

被引：21

作者：

DAVIES, DE

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(70)90055-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：229 / &

共 7 条

DAVIES, DE .

[2]

DAVIES DE, 1968, SOLID STATE TECHNOL, V11, P33

[3] RANGE OF IMPLANTED BORON, PHOSPHORUS, AND ARSENIC IN SILICON [J].

DAVIES, DE .

GIBBONS, JF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03) :295-+

[5] IMPURITY DISTRIBUTION PROFILES IN ION-IMPLANTED SILICON [J].

KLEINFEL.WJ ;

JOHNSON, WS ;

GIBBONS, JF .

[6]

Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[7] SEMICONDUCTOR DOPING BY HIGH ENERGY 1-2.5 MEV ION IMPLANTATION [J].

ROOSILD, S ;

DOLAN, R ;

BUCHANAN, B .