DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON

被引：194

作者：

LI, SS ^{[1
]}

THURBER, WR ^{[1
]}

机构：

[1] NBS,DIV ELECTR TECHNOL,SEMICONDUCT PROCESSING SECT,WASHINGTON,DC 20234

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 07期

关键词：

D O I：

10.1016/0038-1101(77)90100-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：609 / 616

页数：8

共 50 条

[1] ANALYSIS OF ELECTRON-MOBILITY AND RESISTIVITY VERSUS DOPANT DENSITY AND TEMPERATURE IN N-TYPE SILICON
LI, SS
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 317 - 317
[2] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY AND RESISTIVITY IN BORON DOPED SILICON
LI, SS
SOLID-STATE ELECTRONICS, 1978, 21 (09) : 1109 - 1117
[3] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN GAAS
JERVIS, TR
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 53 (02): : K199 - K202
[4] THEORY OF SCREENING AND ELECTRON-MOBILITY - APPLICATION TO N-TYPE SILICON
SANBORN, BA
ALLEN, PB
MAHAN, GD
PHYSICAL REVIEW B, 1992, 46 (23): : 15123 - 15134
[5] ELECTRON-MOBILITY IN N-TYPE GASB
KISELEVA, EV
PETROVSKII, VI
INORGANIC MATERIALS, 1981, 17 (12) : 1593 - 1595
[6] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY IN BORON-DOPED SILICON
LI, SS
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (10): : 1242 - 1242
[7] TEMPERATURE-DEPENDENCE OF THE ELECTRON-MOBILITY IN MOLECULAR-CRYSTALS
EFRIMA, S
METIU, H
CHEMICAL PHYSICS LETTERS, 1979, 60 (02) : 226 - 231
[8] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN INGAAS/INAIAS HETEROSTRUCTURES
MATSUOKA, T
KOBAYASHI, E
TANIGUCHI, K
HAMAGUCHI, C
SASA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (10): : 2017 - 2025
[9] TEMPERATURE-DEPENDENCE OF THE RESISTIVITY OF N-TYPE SI INVERSION-LAYERS
CHAM, KM
WHEELER, RG
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 389 - 389
[10] TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY IN A FREESTANDING QUANTUM-WELL
BANNOV, N
ARISTOV, V
MITIN, V
SOLID STATE COMMUNICATIONS, 1995, 93 (06) : 483 - 486

← 1 2 3 4 5 →