OPTIMUM BARRIER HEIGHT FOR SCHOTTKY-BARRIER DETECTORS

被引：8

作者：

SHOUSHA, AHM ^{[1
]}

机构：

[1] UNIV CAIRO,DEPT ELECTR & ELECT ENGN,CAIRO,EGYPT

来源：

关键词：

D O I：

10.1088/0022-3727/15/4/019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：669 / 675

页数：7

共 7 条

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ANAND, Y ;

MORONEY, WJ .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (08) :1182-+

[2] QUANTITATIVE COMPARISON OF SOLID-STATE MICROWAVE DETECTORS [J].

COWLEY, AM ;

SORENSEN, HO .

[3] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

[4]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[5] NOISE IN SOLID-STATE DEVICES AND LASERS [J].

VANDERZI.A .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1178-+

[6]

Watson H. A., 1969, MICROWAVE SEMICONDUC

WU, CY .