TUNNELING STUDY OF LOCALIZED STATES IN RESERVED REGION OF SB-DOPED SI

被引：2

作者：

SUZUKI, M ^{[1
]}

KAWATA, S ^{[1
]}

机构：

[1] SAGA UNIV,FAC EDUC,SAGA 840,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.20.291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：291 / 292

页数：2

共 9 条

ESAKI, L ;

STILES, PJ .

[2]

KITTEL C, INTRO SOLID STATE PH, P259

[3]

LECOMBER PG, 1973, ELECTRONIC STRUCTURA

[4] DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELING [J].

MAHAN, GD ;

CONLEY, JW .

[5]

MOTT NF, 1971, ELECTRONIC PROCESSES

[6] ELECTRON TUNNELING INTO AMORPHOUS-GERMANIUM [J].

OSMUN, JW .

PHYSICAL REVIEW B, 1975, 11 (12) :5008-5022

SUZUKI, M .

[8]

SUZUKI M, 1980, 7 SAG U FS ENG REP, P25

WOLF, EL ;

WALLIS, RH ;

ADKINS, CJ .

PHYSICAL REVIEW B, 1975, 12 (04) :1603-1607