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- [3] MODIFICATION OF METAL SCHOTTKY CONTACTS ON SILICON BY ION-IMPLANTATION NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 35 (3-4): : 247 - 252
- [4] DISTRIBUTION PROFILES OF PHOSPHORUS IN SILICON AFTER ION-IMPLANTATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (01): : 69 - 72
- [7] ANALYSIS OF ANNEALING AND ION-IMPLANTATION EFFECTS IN TI/TIN CONTACTS ON SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 50 (1-4): : 391 - 394
- [9] MICROSTRUCTURAL EFFECTS OF ION-IMPLANTATION ON MOLYBDENUM METALLOGRAPHY, 1982, 15 (02): : 105 - 120