STUDIES OF CARRIER HEATING IN INGAAS/ALGAAS STRAINED-LAYER QUANTUM-WELL DIODE-LASERS USING A MULTIPLE WAVELENGTH PUMP PROBE TECHNIQUE

被引：40
作者：
SUN, CK
CHOI, HK
WANG, CA
FUJIMOTO, JG
机构：
[1] MIT,DEPT ELECT ENGN & COMP SCI,ELECTR RES LAB,CAMBRIDGE,MA 02139
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 07期
关键词：
D O I：
10.1063/1.108594
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Carrier heating processes in InGaAs/AlGaAs strained-layer single-quantum well devices are studied by using a new femtosecond multiple-wavelength pump probe technique. Contributions from free-carrier absorption and stimulated transitions have been separated by using different combinations of pump and probe wavelengths above and below the band gap. Different cooling times were measured which reflect different thermalization mechanisms. Results show that free-carrier absorption is not always the dominant carrier heating process in III-V quantum well devices.
引用
收藏
页码：747 / 749
页数：3
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