THE CHARACTERISTICS OF ION-BEAM-ASSISTED ETCHING OF GAAS BY PULSED FOCUSED ION-BEAM IRRADIATION

被引：1

作者：

KOSUGI, T

IWASE, H

GAMO, K

机构：

[1] Department of Electrical Engineering, Faculty of Engineering Science, Osaka

[2] Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 21卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(93)90079-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the characteristics of ion beam assisted etching of GaAs by continuous and pulsed Ga+ beam irradiation in a Cl2 ambient. A rate equation model was proposed to explain the measured etch yield. By pulsed beam irradiation, the etch yield increased up to 500 atoms/ion and this increase was explained by the accumulation of GaCl3 in the scale on the surface in this model.

引用

页码：307 / 310

页数：4

共 3 条

[1] Balooch, Olander, The thermal and ion-assisted reactions of GaAs(100) with molecular chlorine, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 4 B, (1986)
[2] Davis, Wolf, A simple model of the chemically assisted ion beam etching yield of GaAs with Cl2 at medium current densities, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 8 B, (1990)
[3] Kosugi, Mimura, Aihara, Gamo, Namba, Low Energy Focused Ion Beam System and Application to Low Damage Microprocess, Japanese Journal of Applied Physics, 29, (1990)

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