ELECTRICAL PROPERTIES OF CARBON-DOPED GALLIUM-PHOSPHIDE

被引:16
|
作者
BORTFELD, DP
CURTIS, BJ
MEIER, H
机构
关键词
D O I
10.1063/1.1661261
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1293 / &
相关论文
共 50 条
  • [41] CHEMISORPTION ON GALLIUM-PHOSPHIDE SURFACES
    VANVELZE.WJ
    MORGAN, AE
    SURFACE SCIENCE, 1973, 39 (01) : 255 - 259
  • [42] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE
    MIYAUCHI, T
    SONOMURA, H
    YAMAMOTO, N
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (12) : 1409 - +
  • [43] GERMANIUM-DOPED GALLIUM-PHOSPHIDE OBTAINED BY NEUTRON-IRRADIATION
    GOLDYS, EM
    BARCZYNSKA, J
    GODLEWSKI, M
    SIENKIEWICZ, A
    LIESERT, BJH
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2287 - 2293
  • [44] ENERGY-LEVELS IN GALLIUM-PHOSPHIDE DOPED BY IMPLANTATION OF NIOBIUM IONS
    CHERNYAEV, VV
    PONOMAREV, NY
    USHAKOV, VV
    DRAVIN, VA
    GIPPIUS, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (12): : 1359 - 1361
  • [45] OPTOELECTRONIC PROPERTIES OF METAL-OXIDE GALLIUM-PHOSPHIDE HETEROJUNCTIONS
    MALIK, AI
    GRUSHKA, GG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (10): : 1017 - 1020
  • [46] NATURE OF A DEEP DONOR CENTER IN OXYGEN-DOPED GALLIUM-PHOSPHIDE
    ILIN, NP
    MASTEROV, VF
    SAMORUKOV, BE
    SHTELMAKH, KF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 940 - 942
  • [47] OPTICAL-PROPERTIES OF ELECTRON-IRRADIATED GALLIUM-PHOSPHIDE
    BRAILOVSKII, EY
    GRIGORYAN, NE
    ERITSYAN, GN
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 649 - 655
  • [48] CONTRAST IN TRIPLET BOUND EXCITONS IN COPPER-DOPED GALLIUM-PHOSPHIDE
    KANE, MJ
    DEAN, PJ
    SKOLNICK, MS
    HAYES, W
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (34): : 6127 - 6138
  • [49] ZONE EDGE PHONONS IN GALLIUM-PHOSPHIDE
    PODOR, B
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 120 (01): : 207 - 213
  • [50] LOCAL VIBRATIONS OF BERYLLIUM IN GALLIUM-PHOSPHIDE
    BERNDT, V
    KOPYLOV, AA
    PIKHTIN, AN
    FIZIKA TVERDOGO TELA, 1975, 17 (09): : 2812 - 2814