PHOTOSTRUCTURAL CHANGE OF CHALCOGENIDE GLASS-FILMS BY IRRADIATION OF LASER DIODE EMISSION

被引：1
作者：
CHIBA, K
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期
关键词：
PHOTOSTRUCTURAL CHANGE; AMORPHOUS CHALCOGENIDE FILM; AS-SE-S-GE; ENERGY BAND-TAIL ABSORPTION; IRRADIATION OF LASER DIODE EMISSION;
D O I：
10.1143/JJAP.29.L2152
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An optical change of As-Se-S-Ge amorphous chalcogenide film was observed by irradiation of a focused beam of laser diode emission of 830 nm wavelength. An optical analysis shows that this change occurs through energy band-tail absorption with an absorption coefficient of less than about 10 cm-1 and through a pure photon process.
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页码：L2152 / L2154
页数：3
相关论文
共 5 条
  • [1] ANDRIESCH AM, 1990, APPL PHYS, V67, P7536
  • [2] IGO T, 1974, ELECT COMMUN LAB TEC, V23, P87
  • [3] MOTT NF, 1971, ELECTRONIC PROCESSES
  • [4] OKOSHI T, 1980, T I ELECRON COMMUN E, V79, P13
  • [5] TANAKA K, 1977, RES ELECTROTECHNICAL
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