ANALYSIS OF DETERIORATION IN IN SOLDER FOR GAALAS DH LASERS

被引：20

作者：

FUJIWARA, K

IMAI, H

FUJIWARA, T

HORI, K

TAKUSAGAWA, M

机构：

[1] Fujitsu Laboratories Limited, Nakahara-ku, Kawasaki 211

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 11期

关键词：

D O I：

10.1063/1.90984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deterioration of In solder associated with the degradation of GaAlAs DH lasers has been investigated. The deterioration of In solder is found to be caused by the diffusion of Au atoms into In solder. The increase in the thermal resistance of DH lasers is observed for the storage test. The increase in the thermal resistance is caused by the formation of the intermetallics between In and Au, which is thermally activated.

引用

页码：861 / 863

页数：3

共 5 条

[1] AGING CHARACTERISTICS OF GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS BONDED WITH GOLD EUTECTIC ALLOY SOLDER [J].

FUJIWARA, K ;

FUJIWARA, T ;

HORI, K ;

TAKUSAGAWA, M .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :668-670

[2]

Kobayashi T., 1978, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE61, P132

[3] ACCELERATED STEP-TEMPERATURE AGING OF ALXGA1-XAS HETEROJUNCTION LASER-DIODES [J].

KRESSEL, H ;

ETTENBERG, M ;

LADANY, I .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :305-308

[4] TEMPERATURE-DEPENDENCE OF DEGRADATION MECHANISMS IN LONG-LIVED (GAAL)AS DH LASERS [J].

RITCHIE, S ;

GODFREY, RF ;

WAKEFIELD, B ;

NEWMAN, DH .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3127-3132

[5]

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