SMALL AREA DEPOSITION OF GE ON GE OR GAAS SUBSTRATES VIA DISPROPORTIONATION OF GEI2

被引:7
作者
BERKENBLIT, M
REISMAN, A
机构
来源
METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期
关键词
D O I
10.1007/BF02662739
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
引用
收藏
页码:803 / +
页数:1
相关论文
共 11 条
[1]   EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION [J].
BERKENBL.M ;
REISMAN, A ;
LIGHT, TB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (09) :966-&
[2]   A DIFFUSION MASK FOR GERMANIUM [J].
JORDAN, EL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (05) :478-481
[3]  
KRONGELB S, 1968, ELECTROCHEM TECHNOL, V6, P251
[4]   GROWTH AND ETCHING OF SI THROUGH WINDOWS IN SIO2 [J].
OLDHAM, WG ;
HOLMSTROM, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :381-+
[5]   ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS [J].
REISMAN, A ;
ROHR, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) :1425-1428
[6]  
REISMAN A, 1969, ELECTRONICS, V42, P88
[7]   SUBSTRATE ORIENTATION EFFECTS AND GERMANIUM EPITAXY IN AN OPEN TUBE HL TRANSPORT SYSTEM [J].
REISMAN, A ;
BERKENBLIT, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :315-+
[8]   THERMODYNAMIC ANALYSES OF OPEN TUBE GERMANIUM DISPROPORTIONATION REACTIONS [J].
REISMAN, A ;
ALYANAKYAN, SA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (10) :1154-1164
[9]   TRANSPIRATION STUDIES OF GE-I2-INERT GAS SYSTEM [J].
REISMAN, A ;
BERKENBL.M ;
ALYANAKY.SA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (2P1) :241-&