首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
SMALL AREA DEPOSITION OF GE ON GE OR GAAS SUBSTRATES VIA DISPROPORTIONATION OF GEI2
被引:7
作者
:
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
BERKENBLIT, M
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
机构
:
来源
:
METALLURGICAL TRANSACTIONS
|
1971年
/ 2卷
/ 03期
关键词
:
D O I
:
10.1007/BF02662739
中图分类号
:
TF [冶金工业];
学科分类号
:
0806 ;
摘要
:
引用
收藏
页码:803 / +
页数:1
相关论文
共 11 条
[1]
EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION
BERKENBL.M
论文数:
0
引用数:
0
h-index:
0
BERKENBL.M
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
LIGHT, TB
论文数:
0
引用数:
0
h-index:
0
LIGHT, TB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 966
-
&
[2]
A DIFFUSION MASK FOR GERMANIUM
JORDAN, EL
论文数:
0
引用数:
0
h-index:
0
JORDAN, EL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(05)
: 478
-
481
[3]
KRONGELB S, 1968, ELECTROCHEM TECHNOL, V6, P251
[4]
GROWTH AND ETCHING OF SI THROUGH WINDOWS IN SIO2
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
HOLMSTROM, R
论文数:
0
引用数:
0
h-index:
0
HOLMSTROM, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(04)
: 381
-
+
[5]
ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
ROHR, R
论文数:
0
引用数:
0
h-index:
0
ROHR, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1425
-
1428
[6]
REISMAN A, 1969, ELECTRONICS, V42, P88
[7]
SUBSTRATE ORIENTATION EFFECTS AND GERMANIUM EPITAXY IN AN OPEN TUBE HL TRANSPORT SYSTEM
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
BERKENBLIT, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 315
-
+
[8]
THERMODYNAMIC ANALYSES OF OPEN TUBE GERMANIUM DISPROPORTIONATION REACTIONS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
ALYANAKYAN, SA
论文数:
0
引用数:
0
h-index:
0
ALYANAKYAN, SA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(10)
: 1154
-
1164
[9]
TRANSPIRATION STUDIES OF GE-I2-INERT GAS SYSTEM
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
BERKENBL.M
论文数:
0
引用数:
0
h-index:
0
BERKENBL.M
ALYANAKY.SA
论文数:
0
引用数:
0
h-index:
0
ALYANAKY.SA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(2P1)
: 241
-
&
[10]
SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 904
-
&
←
1
2
→
共 11 条
[1]
EPITAXIAL GROWTH OF MIRROR SMOOTH GE ON GAAS AND GE BY LOW TEMPERATURE GEL2 DISPROPORTIONATION REACTION
BERKENBL.M
论文数:
0
引用数:
0
h-index:
0
BERKENBL.M
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
LIGHT, TB
论文数:
0
引用数:
0
h-index:
0
LIGHT, TB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
: 966
-
&
[2]
A DIFFUSION MASK FOR GERMANIUM
JORDAN, EL
论文数:
0
引用数:
0
h-index:
0
JORDAN, EL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1961,
108
(05)
: 478
-
481
[3]
KRONGELB S, 1968, ELECTROCHEM TECHNOL, V6, P251
[4]
GROWTH AND ETCHING OF SI THROUGH WINDOWS IN SIO2
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
HOLMSTROM, R
论文数:
0
引用数:
0
h-index:
0
HOLMSTROM, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(04)
: 381
-
+
[5]
ROOM TEMPERATURE CHEMICAL POLISHING OF GE AND GAAS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
ROHR, R
论文数:
0
引用数:
0
h-index:
0
ROHR, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(12)
: 1425
-
1428
[6]
REISMAN A, 1969, ELECTRONICS, V42, P88
[7]
SUBSTRATE ORIENTATION EFFECTS AND GERMANIUM EPITAXY IN AN OPEN TUBE HL TRANSPORT SYSTEM
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
BERKENBLIT, M
论文数:
0
引用数:
0
h-index:
0
BERKENBLIT, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 315
-
+
[8]
THERMODYNAMIC ANALYSES OF OPEN TUBE GERMANIUM DISPROPORTIONATION REACTIONS
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
ALYANAKYAN, SA
论文数:
0
引用数:
0
h-index:
0
ALYANAKYAN, SA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1964,
111
(10)
: 1154
-
1164
[9]
TRANSPIRATION STUDIES OF GE-I2-INERT GAS SYSTEM
REISMAN, A
论文数:
0
引用数:
0
h-index:
0
REISMAN, A
BERKENBL.M
论文数:
0
引用数:
0
h-index:
0
BERKENBL.M
ALYANAKY.SA
论文数:
0
引用数:
0
h-index:
0
ALYANAKY.SA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(2P1)
: 241
-
&
[10]
SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES
SHAW, DW
论文数:
0
引用数:
0
h-index:
0
SHAW, DW
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(09)
: 904
-
&
←
1
2
→