ION-BEAM-INDUCED FORMATION OF THE PDSI SILICIDE

被引：47

作者：

TSAUR, BY

LAU, SS

MAYER, JW

机构：

[1] California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Formation of PdSi has been obtained by implanting energetic Xe ions through a thin Pd (or Pd2Si) film on a Si substrate. The PdSi phase was found to form near the Pd2Si-Si interface from Rutherford backscattering measurements. Phase formation was confirmed by glancing-angle x-ray-diffraction analysis. Subsequent thermal annealing at 300-400°C resulted in successive growth of the phase. A uniform PdSi layer was obtained at the final stage of the annealing and exhibited a sheet resistivity of 18 μΩ cm.

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页码：225 / 227

页数：3

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