GATE-VOLTAGE-DEPENDENT EFFECTIVE CHANNEL LENGTH AND SERIES RESISTANCE OF LDD MOSFETS

被引：158

作者：

HU, GJ

CHANG, C

CHIA, YT

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期

关键词：

D O I：

10.1109/T-ED.1987.23337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2469 / 2475

页数：7

共 16 条

[1]

Antognetti P., 1981, International Electron Devices Meeting, P574

[2]

ANTONIADIS DA, 1978, 50192 STANF U INT CI

[3]

CHANG CF, 1986, SOFT HARD MAGNETIC M, P29

[4] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J].

CHERN, JGJ ;

CHANG, P ;

MOTTA, RF ;

GODINHO, N .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :170-173

[5] MEASUREMENT OF MOSFET CONSTANTS [J].

DELAMONEDA, FH ;

KOTECHA, HN ;

SHATZKES, M .

ELECTRON DEVICE LETTERS, 1982, 3 (01) :10-12

[6] ACCURACY OF AN EFFECTIVE CHANNEL LENGTH EXTERNAL RESISTANCE EXTRACTION ALGORITHM FOR MOSFETS [J].

LAUX, SE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1245-1251

[7] ANALYSIS OF THE GATE-VOLTAGE-DEPENDENT SERIES RESISTANCE OF MOSFETS [J].

NG, KK ;

LYNCH, WT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (07) :965-972

[8] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) :424-432

[9] QUADRUPLY SELF-ALIGNED MOS (QSA MOS) - A NEW SHORT-CHANNEL HIGH-SPEED HIGH-DENSITY MOSFET FOR VLSI [J].

OHTA, K ;

YAMADA, K ;

SAITOH, M ;

SHIMIZU, K ;

TARUI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1352-1358

[10] BASIC PARAMETER MEASUREMENT AND CHANNEL BROADENING EFFECT IN THE SUBMICROMETER MOSFET [J].

PENG, KL ;

OH, SY ;

AFROMOWITZ, MA ;

MOLL, JL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :473-475

← 1 2 →