TRANSIENT FLUOROCARBON FILM THICKNESS EFFECTS NEAR THE SILICON DIOXIDE SILICON INTERFACE IN SELECTIVE SILICON DIOXIDE REACTIVE ION ETCHING

被引：31

作者：

JASO, MA

OEHRLEIN, GS

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575712

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

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页码：1397 / 1401

页数：5

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