A STUDY OF THE EFFECTS OF ANNEALING, ZINC DIFFUSION AND COPPER DIFFUSION ON THE DEFECT STRUCTURE OF SILICON-DOPED GALLIUM-ARSENIDE

被引:17
作者
HUTCHINSON, PW [1 ]
BALL, RK [1 ]
机构
[1] UNIV BIRMINGHAM,DEPT PHYS MET & SCI MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND
关键词
D O I
10.1007/BF00591476
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:406 / 416
页数:11
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