PHYSICS-BASED EXPRESSIONS FOR THE NONLINEAR CAPACITANCES OF THE MESFET EQUIVALENT-CIRCUIT

In this paper, we present a simple physical determination of the nonlinear capacitance parameters (C(gdo) and C(gso)) of the MESFET equivalent circuit. Semiempirical models such as the Curtice and Statz-Pucel models, in conjunction with these physics-based expressions, are a fast tool for CAD of microwave integrated circuit simulation, saving the designer the tedious and sometimes difficult process of parameter extraction and providing a better estimate of device statistics. Using the equations obtained in this work, a submicron gate length MESFET has been simulated and theoretical results are in good agreement with the experimental measurements.