THE HALL-EFFECT IN BETA-FESI2 SINGLE-CRYSTALS

被引：54

作者：

ARUSHANOV, E ^{[1
]}

KLOC, C ^{[1
]}

HOHL, H ^{[1
]}

BUCHER, E ^{[1
]}

机构：

[1] MOLDAVIAN ACAD SCI,INST APPL PHYS,KISHINEV,MOLDOVA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.355755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of the transport and magnetization measurements on beta-FeSi2 Single crystals are presented. The magnetic field dependence of the Hall coefficient in n-type beta-FeSi2 was observed in the temperature range of 30-300 K and explained in the limits of a two-band model. The magnetization measurements were performed within the range 4.2-300 K. It was shown that the contribution of the anomalous Hall effect to the total Hall voltage is negligible. Parameters of charge carriers, taking part in conductivity were calculated and the separation between the bands was estimated.

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页码：5106 / 5109

页数：4

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