MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS

被引：142

作者：

CARNEZ, B

CAPPY, A

KASZYNSKI, A

CONSTANT, E

SALMER, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：784 / 790

页数：7

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