MODELING OF A SUBMICROMETER GATE FIELD-EFFECT TRANSISTOR INCLUDING EFFECTS OF NONSTATIONARY ELECTRON DYNAMICS

被引：142

作者：

CARNEZ, B

CAPPY, A

KASZYNSKI, A

CONSTANT, E

SALMER, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 01期

关键词：

D O I：

10.1063/1.327292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：784 / 790

页数：7

相关论文

共 15 条

[1] BREWITTTAYLOR CR, 1978, 8TH P EUR MICR C PAR, P415
[2] CARNEZ B, 1978, 8TH P EU MC, P410
[3] Conwell E M, 1967, HIGH FIELD TRANSPORT
[4] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
FAWCETT, W
BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[5] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET
GREBENE, AB
GHANDHI, SK
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (07) : 573 - +
[6] 2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS
HOCKNEY, RW
WARRINER, RA
REISER, M
[J]. ELECTRONICS LETTERS, 1974, 10 (23) : 484 - 486
[7] COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR
KENNEDY, DP
OBRIEN, RR
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) : 95 - &
[8] TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING
KRATZER, S
FREY, J
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4064 - 4068
[9] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING
LITTLEJOHN, MA
HAUSER, JR
GLISSON, TH
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4587 - 4590
[10] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6