HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER

被引：19

作者：

RENNIE, J

OKAJIMA, M

WATANABE, M

HATAKOSHI, G

机构：

[1] Research and Development Center, Toshiba Corporation, Kawasaki

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234444

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified multiple quantum barrier structure has been applied to a 630 nm band laser diode. The result is a laser exhibiting a high maximum operating temperature, of 74-degrees-C, and a low threshold current of 49 mA. These characteristics correspond to a 22-degrees-C increase in the operation temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to our knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier.

引用

页码：1857 / 1862

页数：6

共 23 条

[21] High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes
Lin, CC
Liu, KS
Wu, MC
Shiao, HP
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (6A): : 3309 - 3312
[22] 1.57-MU-M STRAINED-LAYER QUANTUM-WELL GAINALAS RIDGE-WAVE-GUIDE LASER-DIODES WITH HIGH-TEMPERATURE (130-DEGREES-C) AND ULTRAHIGHSPEED (17 GHZ) PERFORMANCE
STEGMULLER, B
BORCHERT, B
GESSNER, R
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) : 597 - 599
[23] HIGH-TEMPERATURE (130-DEGREES-C) CW OPERATION OF 1.53-MU-M INGAASP RIDGE-WAVE-GUIDE LASERS USING STRAINED QUATERNARY QUANTUM-WELLS
STEGMULLER, B
VEUHOFF, E
RIEGER, J
HEDRICH, H
ELECTRONICS LETTERS, 1993, 29 (19) : 1691 - 1693

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