HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER

被引：19
|
作者：
RENNIE, J
OKAJIMA, M
WATANABE, M
HATAKOSHI, G
机构：
[1] Research and Development Center, Toshiba Corporation, Kawasaki
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期
关键词：
D O I：
10.1109/3.234444
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A modified multiple quantum barrier structure has been applied to a 630 nm band laser diode. The result is a laser exhibiting a high maximum operating temperature, of 74-degrees-C, and a low threshold current of 49 mA. These characteristics correspond to a 22-degrees-C increase in the operation temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to our knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier.
引用
收藏
页码：1857 / 1862
页数：6
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