PHOTOCHEMICAL VAPOR-DEPOSITION OF AL2O3 THIN-FILMS WITH HIGH QUANTUM YIELD

被引：1

作者：

FUKUSHIMA, Y

HIGASHINO, T

MATSUMURA, N

SARAIE, J

机构：

[1] Department of Electronics and Information Science, Kyoto Institute of Technologyn, Kyoto, 606, Matsugasaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 3A期

关键词：

PHOTO-CVD; AL2O3 THIN FILMS; HIGH QUANTUM YIELD; SI MIS STRUCTURE; LOW INTERFACE STATE DENSITY;

D O I：

10.1143/JJAP.31.L261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photo-Chemical Vapor Deposition (CVD) of Al2O3 thin films has been studied under low-pressure Hg lamp irradiation. The source material was aluminum-tri-isopropoxide. Under oxygen atmosphere the deposition rate was constant and about 200 angstrom/min in the temperature range of 230-360-degrees-C. The deposition rate showed saturation as the UV light intensity was increased, and the apparent quantum yield was found to be roughly close to unity. The interface state density of the Al/Al2O3/p-Si MIS structure was very low, which indicates the usefulness of low-temperature deposition.

引用

页码：L261 / L264

页数：4

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