LOW THRESHOLD CURRENT IMPLANTED-PLANAR BURIED-HETEROSTRUCTURE GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER IN GAAS ALGAAS

被引：7
作者：
VAWTER, GA
MYERS, DR
BRENNAN, TM
HAMMONS, BE
机构：
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 20期
关键词：
D O I：
10.1063/1.103030
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report dramatic improvements to the implanted-planar buried-heterostructure graded-index separate confinement heterostructure (IPBH-GRINSCH) laser in (AlGa)As/GaAs which produces low threshold current, continuous-wave operation. Our process features significantly reduced fabrication complexity of high quality, index-guided laser diodes compared to regrowth techniques and, in contrast to diffusion-induced disordering, allows creation of self-aligned, buried, blocking junctions by ion implantation. The improved single-stripe IPBH-GRINSCH lasers exhibit 39 mA threshold current, cw operation.
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页码：1945 / 1947
页数：3
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