CALCULATION OF INTRINSIC TRANSPORT PARAMETERS OF A DOUBLE-DIFFUSED TRANSISTOR

被引：7
|
作者：
YANG, ES
机构：
来源：
SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 05期
关键词：
D O I：
10.1016/0038-1101(69)90096-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：399 / +
页数：1
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