MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB ON INP AND GAAS SUBSTRATES

被引：50

作者：

OH, JE

BHATTACHARYA, PK

CHEN, YC

TSUKAMOTO, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3618 / 3621

页数：4

共 9 条

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[9] HETEROEPITAXIAL GROWTH OF INSB ON (100)GAAS USING MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (13) :1189-1191

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