MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INSB ON INP AND GAAS SUBSTRATES

被引：50
|
作者：
OH, JE
BHATTACHARYA, PK
CHEN, YC
TSUKAMOTO, S
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期
关键词：
D O I：
10.1063/1.344069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3618 / 3621
页数：4
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