CHARGE-TRAPPING MODEL OF METASTABILITY IN DOPED HYDROGENATED AMORPHOUS-SILICON

被引：21
作者：
BRANZ, HM
机构：
来源：
PHYSICAL REVIEW B | 1988年 / 38卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.38.7474
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：7474 / 7479
页数：6
相关论文
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