EPR SPECTRUM OF PARAMAGNETIC CENTERS IN SILICON DIOXIDE

被引：0

作者：

MESHCHERYAKOV, NA

ALT, LY

ANUFRIEN.VF

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1967年 / 1卷 / 04期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：498 / +

页数：1

共 9 条

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[2]

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[5]

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[6] OXYGEN ADSORPTION ON SILICON SURFACES OBSERVED VIA ELECTRON SPIN RESONANCE [J].

MULLER, KA ;

SPARNAAY, MJ ;

CHAN, P ;

KLEINER, R ;

OVENALL, DW .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (07) :2254-&

[7]

VOEVODSKII VV, 1962, APPLICATIONS ELECTRO

[8] PARAMAGNETIC RESONANCE OF DEFECTS INTRODUCED NEAR SURFACE OF SOLIDS BY MECHANICAL DAMAGE [J].

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ESTLE, TL .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :1854-&

[9] SPIN RESONANCE IN ELECTRON IRRADIATED SILICON [J].

WATKINS, GD ;

CORBETT, JW ;

WALKER, RM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1198-1203

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