SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2)

被引：113
作者：
CHAMBERS, SA
XU, F
CHEN, HW
VITOMIROV, IM
ANDERSON, SB
WEAVER, JH
机构：
来源：
PHYSICAL REVIEW B | 1986年 / 34卷 / 10期
关键词：
D O I：
10.1103/PhysRevB.34.6605
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：6605 / 6611
页数：7
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