THE EFFECT OF ION-IMPLANTATION OF AR ON THE AQUEOUS CORROSION-RESISTANCE OF ZR-4 ALLOY

被引：22

作者：

HE, JH

BAI, XD

MA, CL

CHEN, HM

机构：

[1] Department of Materials Science and Engineering, Tsinghua University, Beijing

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 100卷 / 01期

关键词：

D O I：

10.1016/0168-583X(94)00744-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of ion implantation on the aqueous corrosion resistance of Zr-4 in deaerated 1N H2SO4 was studied with the potentiokinetic technique. The Zr-4 alloy was bombarded with 5 X 10(14)-2 X 10(16) Ar/cm(2) of 190 keV. It was found that the passive current density of Zr-4 decreases with increasing implantation dose. Photoelectrochemical results show that the ion implantation of Ar in Zr-4 raises the flatband potential of its passive film. AES was employed to analyze the surface of the passive film of Zr-4. The decrease in passive current density may be attributed to a thickening oxide layer on Zr-4 and a decrease in concentration of oxygen vacancies in its passive film.

引用

页码：59 / 64

页数：6

共 13 条

[1] EFFECT OF ION-IMPLANTATION ON CORROSION BEHAVIOR OF PURE IRON .2. CHROMIUM ION-IMPLANTATION [J].