DELAY IN LASING OF WIDE-GAP II-VI LASER-DIODES

被引：4
|
作者：
OZAWA, M
EGAN, A
ISHIBASHI, A
机构：
[1] Sony Corporation Research Center 174, 240, Fujitsuka-cho Hodogaya-ku Yokohama
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 02期
关键词：
SEMICONDUCTORS; QUANTUM WELLS; DIELECTRIC RESPONSE;
D O I：
10.1016/0038-1098(95)00024-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Long time delay before lasing in a II-VI laser diode has been observed. Due to this delay, a nominal threshold current increases as the width of applied current pulse becomes shorter. This delay is attributed to the internal Q switching caused by the balance of injected carriers, temperature rise and gain-guiding. By fitting the calculated data to the experimental ones, rates of refractive index change with carrier concentration and with temperature have been estimated.
引用
收藏
页码：87 / 91
页数：5
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