DELAY IN LASING OF WIDE-GAP II-VI LASER-DIODES

被引：4
|
作者：
OZAWA, M
EGAN, A
ISHIBASHI, A
机构：
[1] Sony Corporation Research Center 174, 240, Fujitsuka-cho Hodogaya-ku Yokohama
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 02期
关键词：
SEMICONDUCTORS; QUANTUM WELLS; DIELECTRIC RESPONSE;
D O I：
10.1016/0038-1098(95)00024-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Long time delay before lasing in a II-VI laser diode has been observed. Due to this delay, a nominal threshold current increases as the width of applied current pulse becomes shorter. This delay is attributed to the internal Q switching caused by the balance of injected carriers, temperature rise and gain-guiding. By fitting the calculated data to the experimental ones, rates of refractive index change with carrier concentration and with temperature have been estimated.
引用
收藏
页码：87 / 91
页数：5
相关论文
共 50 条
  • [1] WIDE-GAP II-VI HETEROSTRUCTURES
    GUNSHOR, RL
    NURMIKKO, AV
    KOLODZIEJSKI, LA
    KOBAYASHI, M
    OTSUKA, N
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 14 - 22
  • [2] DOPING OF WIDE-GAP II-VI COMPOUNDS
    FASCHINGER, W
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 80 - 86
  • [3] SHORT WAVELENGTH II-VI LASER-DIODES
    HAASE, MA
    QIU, J
    DEPUYDT, JM
    CHENG, H
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 9 - 16
  • [4] Doping and characterization of wide-gap II-VI epilayers
    Karczewski, G
    Wojtowicz, T
    ACTA PHYSICA POLONICA A, 1996, 90 (04) : 635 - 644
  • [5] Exciton versus free-carrier lasing in wide-gap II-VI quantum wells
    Cingolani, R
    Coli, G
    Calcagnile, L
    Vanzetti, L
    Sorba, L
    Franciosi, A
    LaRocca, GC
    Campi, D
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 141 - 146
  • [6] II-VI BLUE-GREEN LASER-DIODES
    ISHIBASHI, A
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) : 741 - 748
  • [7] BLUE-GREEN II-VI LASER-DIODES
    WALKER, CT
    DEPUYDT, JM
    HAASE, MA
    QIU, J
    CHENG, H
    PHYSICA B, 1993, 185 (1-4): : 27 - 35
  • [8] Fabrication of quantum structures in wide-gap II-VI semiconductors
    Yasuda, T
    Zhang, BP
    Segawa, Y
    ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1999, 82 (03): : 51 - 60
  • [9] Linear and nonlinear optics of wide-gap II-VI semiconductors
    Klingshirn, C
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (02): : 857 - 871
  • [10] Fabrication of quantum structures in wide-gap II-VI semiconductors
    Photodynamics Research Center, Inst. of Phys. and Chemical Research, Sendai 980, Japan
    Electron Commun Jpn Part II Electron, 3 (51-60):
12345