DELAY IN LASING OF WIDE-GAP II-VI LASER-DIODES

被引：4

作者：

OZAWA, M

EGAN, A

ISHIBASHI, A

机构：

[1] Sony Corporation Research Center 174, 240, Fujitsuka-cho Hodogaya-ku Yokohama

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 02期

关键词：

SEMICONDUCTORS; QUANTUM WELLS; DIELECTRIC RESPONSE;

D O I：

10.1016/0038-1098(95)00024-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Long time delay before lasing in a II-VI laser diode has been observed. Due to this delay, a nominal threshold current increases as the width of applied current pulse becomes shorter. This delay is attributed to the internal Q switching caused by the balance of injected carriers, temperature rise and gain-guiding. By fitting the calculated data to the experimental ones, rates of refractive index change with carrier concentration and with temperature have been estimated.

引用

收藏

页码：87 / 91

页数：5

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