共 11 条
- [1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
- [2] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 1039 - 1051
- [3] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
- [4] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
- [5] DEXTER DL, 1958, SOLID STATE PHYS, V6, P363
- [6] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
- [8] ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-X [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03): : 525 - 539
- [9] 2-ELECTRON IMPURITY STATES IN GAP - O [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15): : 2455 - 2462
- [10] JAROS M, 1980, ADV PHYS, V29, P403