A STUDY OF THE ELECTRONIC WAVEFUNCTION ASSOCIATED WITH ISOLATED NITROGEN IMPURITIES IN GAP

被引:7
作者
BANKS, PW
JAROS, M
机构
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 17期
关键词
D O I
10.1088/0022-3719/14/17/006
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2333 / 2339
页数:7
相关论文
共 11 条
  • [1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2
  • [2] EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP
    COHEN, E
    STURGE, MD
    [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 1039 - 1051
  • [3] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
    COHEN, ML
    BERGSTRESSER, TK
    [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
  • [4] FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE
    CUTHBERT, JD
    THOMAS, DG
    [J]. PHYSICAL REVIEW, 1967, 154 (03): : 763 - &
  • [5] DEXTER DL, 1958, SOLID STATE PHYS, V6, P363
  • [6] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
    FAULKNER, RA
    [J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
  • [7] LOCALIZED DEFECTS IN III-V SEMICONDUCTORS
    JAROS, M
    BRAND, S
    [J]. PHYSICAL REVIEW B, 1976, 14 (10): : 4494 - 4505
  • [8] ELECTRONIC STATES ASSOCIATED WITH THE SUBSTITUTIONAL NITROGEN IMPURITY IN GAPXAS1-X
    JAROS, M
    BRAND, S
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (03): : 525 - 539
  • [9] 2-ELECTRON IMPURITY STATES IN GAP - O
    JAROS, M
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (15): : 2455 - 2462
  • [10] JAROS M, 1980, ADV PHYS, V29, P403