AVALANCHE BREAKDOWN-DOUBLE INJECTION INDUCED NEGATIVE RESISTANCE IN SEMICONDUCTORS

被引：32
作者：
STEELE, MC
ANDO, K
LAMPERT, MA
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1962年 / 17卷 / 11期
关键词：
D O I：
10.1143/JPSJ.17.1729
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：1729 / &
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