ION-BEAM MIXING IN INSULATOR SUBSTRATES

被引：32

作者：

MCHARGUE, CJ ^{[1
]}

JOSLIN, DL ^{[1
]}

WHITE, CW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB, OAK RIDGE, TN 37831 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)96284-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Studies of ion beam mixing involving insulator substrates is reviewed with an emphasis on thermodynamical and thermochemical considerations. Such studies generally have employed the bi-layer configuration of metal/insulator combinations. There is little evidence for long-range material transport. In the case of sapphire (single crystal Al2O3) substrates, only recoil mixing has been detected for both metal and oxide films irradiated at room temperature. ''Demixing'' of recoil-implanted cations is indicated at temperatures of 825-900-degrees-C. Agglomeration of non-wetting metal films suggests that surface diffusion occurs under the influence of the ion beam. Ballistic mixing has been reported for metal films on SiC, Si3N4 and SiO2. Ion beam-induced reactions are observed at the interfaces for systems in which the enthalpy of reaction is favorable. There is evidence that chemical effects in the cascade mixing regime determine the phases present in the mixed zone.

引用

页码：549 / 557

页数：9

共 51 条

[1] ENHANCEMENT OF COPPER SAPPHIRE ADHESION INDUCED BY ION-BEAM MIXING [J].

ABONNEAU, E ;

FUCHS, G ;

TREILLEUX, M ;

PEREZ, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4) :111-116

[2]

ABONNEAU E, 1990, THESIS U C BERNARD L

[3] ION-IMPLANTATION, ION-BEAM MIXING, AND ANNEALING STUDIES OF METALS IN AL2O3, SIC AND SI3N4 [J].

APPLETON, BR ;

NARAMOTO, H ;

WHITE, CW ;

HOLLAND, OW ;

MCHARGUE, CJ ;

FARLOW, G ;

NARAYAN, J ;

WILLIAMS, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) :167-175

[4]

Baglin J. E. E., 1987, Ion beam modification of insulators, P585

[5] CHEMICAL EFFECTS IN ION MIXING OF TRANSITION-METALS ON SIO2 [J].

BANWELL, T ;

LIU, BX ;

GOLECKI, I ;

NICOLET, MA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :125-129

[6] CHEMICAL EFFECTS IN ION MIXING OF A TERNARY-SYSTEM (METAL-SIO2) [J].

BANWELL, T ;

NICOLET, MA ;

SANDS, T ;

GRUNTHANER, PJ .

APPLIED PHYSICS LETTERS, 1987, 50 (10) :571-573

[7]

Bhattacharya R. S., 1987, Journal of Materials Research, V2, P211, DOI 10.1557/JMR.1987.0211

[8] ION-BEAM MIXING OF CHROMIUM ON SILICON-NITRIDE CERAMICS [J].

BOLSE, W ;

PETEVES, SD ;

VREDENBERG, AM ;

SARIS, FW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4) :138-142

[9] ION-BEAM MIXING OF MARKER LAYERS INTO AMORPHOUS ALUMINUM-OXIDE [J].

COOPER, EA ;

NASTASI, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4) :558-561

[10]

Davies J. A., 1984, Ion implantation and beam processing, P81

← 1 2 3 4 5 6 →