ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES

被引：10

作者：

BARNOSKI, MK ^{[1
]}

LOPER, DD ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90180-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：433 / &

相关论文

共 17 条

[1] CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON
BADER, R
KALBITZER, S
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (01) : 13 - +
[2] MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS
BARNOSKI, MK
LOPER, DD
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (04) : 441 - &
[3] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON
BARON, R
SHIFRIN, GA
MARSH, OJ
MAYER, JW
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3702 - &
[4] POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON
DAVIES, DE
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (07) : 227 - &
[5] IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS
DAVIES, DE
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (02) : 229 - &
[6] ELECTRODE REACTIONS AND MECHANISM OF SILICON ANODIZATION IN N-METHYLACETAMIDE
DUFFEK, EF
MYLROIE, C
BENJAMINI, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) : 1042 - 1046
[7] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON
FAIR, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1278 - &
[8] LATTICE DISORDER PRODUCED IN SI BY 40-KEV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR
HART, RR
MARSH, OJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 206 - &
[9] Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8
[10] JOHNSON WS, 1969, PROJECTED RANGE STAT