ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES

被引：10

作者：

BARNOSKI, MK ^{[1
]}

LOPER, DD ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 04期

关键词：

D O I：

10.1016/0038-1101(73)90180-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / &

共 17 条

[1] CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED SILICON [J].

BADER, R ;

KALBITZER, S .

APPLIED PHYSICS LETTERS, 1970, 16 (01) :13-+

[2] MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS [J].

BARNOSKI, MK ;

LOPER, DD .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :441-&

[3] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[4] POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON [J].

DAVIES, DE .

APPLIED PHYSICS LETTERS, 1969, 14 (07) :227-&

[5] IMPLANTED PROFILES OF BORON, PHOSPHORUS AND ARSENIC IN SILICON FROM JUNCTION DEPTH MEASUREMENTS [J].

DAVIES, DE .

SOLID-STATE ELECTRONICS, 1970, 13 (02) :229-&

[6] ELECTRODE REACTIONS AND MECHANISM OF SILICON ANODIZATION IN N-METHYLACETAMIDE [J].

DUFFEK, EF ;

MYLROIE, C ;

BENJAMINI, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (09) :1042-1046

[7] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON [J].

FAIR, RB .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1278-&

[8] LATTICE DISORDER PRODUCED IN SI BY 40-KEV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR [J].

HART, RR ;

MARSH, OJ .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :206-&

[9]

Johannson N. G. E., 1970, SOLID STATE ELECTRON, V13, P317, DOI 10.1016/0038-1101(70)90183-8

[10]

JOHNSON WS, 1969, PROJECTED RANGE STAT

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