MICROPATTERNING OF EPITAXIALLY GROWN YBCO THIN-FILMS ON ZRO2-BUFFERED SILICON SINGLE-CRYSTALS

被引:2
作者
BEDDIES, G
LEIBOLD, B
HABERMEIER, HU
LU, GH
机构
[1] TECH UNIV CHEMNITZ,O-9010 CHEMNITZ,GERMANY
[2] MAX PLANCK INST MET RES,W-7000 STUTTGART 80,GERMANY
来源
PHYSICA C | 1991年 / 185卷
关键词
D O I
10.1016/0921-4534(91)91175-4
中图分类号
O59 [应用物理学];
学科分类号
摘要
Superconducting Y-Ba-Cu-O thin films are deposited on silicon (100) substrates where an intermediate buffer layer of yttria stabilized zirconia [YSZ] is used to prevent interdiffusion and interfacial reactions. Both layers are grown epitaxially by the pulsed laser deposition technique. The films are patterned by two different schemes with different capabilities for ultrafine line definition. One is the conventional photoresist technique combined with ion milling, the other is a new type of selective epitaxy of the YBCO thin films on prepatterned YSZ thin films. In both cases critical temperatures around 90 K and critical currents exceeding 10(6) A/cm2 at 77K are achieved.
引用
收藏
页码:2101 / 2102
页数:2
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