The Influence of Chemical Oxidation on Surface State and Photoluminescence of Porous Silicon

被引：2

作者：

Li Jingjian ^{[1
]}

Diao Peng ^{[1
]}

Cai Shengmin ^{[1
]}

Hou Yongtian ^{[2
]}

Wang Xin ^{[2
]}

Zhang Shulin ^{[2
]}

机构：

[1] Peking Univ, Dept Chem, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

来源：

ACTA PHYSICO-CHIMICA SINICA | 1994年 / 10卷 / 08期

关键词：

Porous silicon; Fourier transformed infrared transmission spectra; Photoluminescence; Photoluminescence mechanism;

D O I：

10.3866/PKU.WHXB19940814

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were examined. With the increase of oxidizing duration. the relative amount of the Si-H-2 surface species on PS decreases even though the photoluminescence intensity increases, the result suggests that it isn't SiH2 but Si O and Si-O-Si on the interface of PS play a key role in enhancing the photoluminescence. A complete photoluminescence mechanism should consider the influence of surface state of porous silicon based on the quantum confinement effect model.

引用

页码：737 / 740

页数：4

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