SLOW DEGRADATION MECHANISM OF GAALAS LIGHT-EMITTING-DIODES

被引:6
作者
KONDO, K
YAMAKOSHI, S
ISOZUMI, S
YAMAOKA, T
机构
关键词
D O I
10.7567/JJAPS.19S1.437
中图分类号
O59 [应用物理学];
学科分类号
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页码:437 / 440
页数:4
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共 15 条
[1]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643
[2]   EFFECT OF INTERFACE RECOMBINATION AT ALXGA1-XAS P-N-JUNCTION PERIMETERS ON PHOTO-LUMINESCENCE AND CURRENT [J].
HENRY, CH ;
LOGAN, RA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1471-1474
[3]   ORIGIN OF N-CONGRUENT-+0-2 INJECTION CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].
HENRY, CH ;
LOGAN, RA ;
MERRITT, FR .
APPLIED PHYSICS LETTERS, 1977, 31 (07) :454-456
[4]   NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].
HENRY, CH ;
LANG, DV .
PHYSICAL REVIEW B, 1977, 15 (02) :989-1016
[5]  
ISOZUMI S, 1978, NOV P IEEE SPEC C TE
[6]   DEEP-LEVEL DISTRIBUTIONS NEAR P-N-JUNCTIONS IN LPE GAAS [J].
LANG, DV ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1533-1537
[7]   STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].
LANG, DV ;
LOGAN, RA .
JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066
[8]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[9]   CAPACITANCE SPECTROSCOPY STUDIES OF DEGRADED ALXGA1-XAS DH STRIPE-GEOMETRY LASERS [J].
LANG, DV ;
HARTMAN, RL ;
SCHUMAKER, NE .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (11) :4986-4992
[10]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022